Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

被引：11
|
作者：
Foro, L. L. [1 ]
Touboul, A. D. [1 ]
Michez, A. [1 ]
Wrobel, F. [1 ]
Rech, P. [2 ]
Dilillo, L. [3 ]
Frost, C. [4 ]
Saigne, F. [1 ]
机构：
[1] Univ Montpellier 2, CNRS UM2, IES UMR 5214, F-34095 Montpellier 5, France
[2] Univ Fed Rio Grande do Sul, BR-91501970 Porto Alegre, RS, Brazil
[3] Univ Montpellier 2, CNRS UM2, LIRMM UMR 5506, F-34095 Montpellier 5, France
[4] Rutherford Appleton Lab, ISIS, Sci & Technol Facil Council, Didcot OX11 0QX, Oxon, England
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 04期
关键词：
Atmospheric neutrons; cross section; gate oxide breakdown; insulated gate bipolar transistor (IGBT); Single Event Burnout (SEB); Single Event Gate Rupture (SEGR); trench gate fieldstop; SINGLE-EVENT BURNOUT; POWER MOSFETS; RUPTURE; SEGR; MECHANISM; MODEL;
D O I：
10.1109/TNS.2014.2332813
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.
引用
收藏
页码：1739 / 1746
页数：8
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