Short-circuit protection for an IGBT with detecting the gate voltage and gate charge

被引：12

作者：

Hasegawa, K. ^{[1
]}

Yamamoto, K. ^{[2
]}

Yoshida, H. ^{[2
]}

Hamada, K. ^{[2
]}

Tsukuda, M. ^{[3
]}

Omura, I. ^{[2
]}

机构：

[1] Kyushu Inst Technol, Dept Biol Funct Engn, Wakamatsu Ku, Kitakyushu, Fukuoka 8080196, Japan

[2] Kyushu Inst Technol, Dept Elect Engn & Elect, Tobata Ku, Kitakyushu, Fukuoka 8048550, Japan

[3] ICSEAD, Wakamatsu Ku, Kitakyushu, Fukuoka 8080196, Japan

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

Insulated-Gate Bipolar Transistors (IGBTs); Short-circuit protection; Power electronic converters;

D O I：

10.1016/j.microrel.2014.07.083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a new short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, A/D converters, and a D/A converter is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1897 / 1900

页数：4

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