Short-circuit protection for an IGBT with detecting the gate voltage and gate charge

被引：12

作者：

Hasegawa, K. ^{[1
]}

Yamamoto, K. ^{[2
]}

Yoshida, H. ^{[2
]}

Hamada, K. ^{[2
]}

Tsukuda, M. ^{[3
]}

Omura, I. ^{[2
]}

机构：

[1] Kyushu Inst Technol, Dept Biol Funct Engn, Wakamatsu Ku, Kitakyushu, Fukuoka 8080196, Japan

[2] Kyushu Inst Technol, Dept Elect Engn & Elect, Tobata Ku, Kitakyushu, Fukuoka 8048550, Japan

[3] ICSEAD, Wakamatsu Ku, Kitakyushu, Fukuoka 8080196, Japan

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

Insulated-Gate Bipolar Transistors (IGBTs); Short-circuit protection; Power electronic converters;

D O I：

10.1016/j.microrel.2014.07.083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a new short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, A/D converters, and a D/A converter is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1897 / 1900

页数：4

共 50 条

[21] SHORT-CIRCUIT PROTECTION FOR VOLTAGE REGULATORS
GRANTER, W
[J]. ELECTRONICS, 1970, 43 (09): : 91 - &
[22] Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor
Ji, In-Hwan
Choi, Young-Hwan
Ha, Min-Woo
Han, Min-Koo
Choi, Yearn-Ik
[J]. PHYSICA SCRIPTA, 2006, T126 : 50 - 52
[23] Short-circuit detection based on gate-emitter voltage of high-voltage IGBTs
Fuhrmann, Jan
Hammes, David
Muenster, Patrick
Lexow, Daniel.
Eckel, Hans-Guenter
[J]. 2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE), 2017,
[24] Improved Gate-Voltage-Driven Desaturation Short-Circuit Protection Circuit With Robust Switching Noise Immunity for WBG Power Semiconductors
Min, Sung-Soo
Kim, Rae-Young
[J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2023, 11 (03) : 2535 - 2544
[25] Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions
Benmansour, A.
Azzopardi, S.
Martin, J. C.
Woirgard, E.
[J]. MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1730 - 1734
[26] Dual MOS gate controlled thyristor (DMGCT) structure with short-circuit withstand capability superior to IGBT
Ajit, JS
[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (06) : 294 - 296
[27] Influence of the Gate Drive on the Short-Circuit Type II and Type III Behaviour of HV-IGBT
Schumann, Joerg
Pierstorf, Steffen
Eckel, Hans-Guenter
[J]. INTERNATIONAL EXHIBITION AND CONFERENCE FOR POWER ELECTRONICS, INTELLIGENT MOTION AND POWER QUALITY 2010 (PCIM EUROPE 2010), VOLS 1 AND 2, 2010, : 696 - 701
[28] Modeling of IGBT With High Bipolar Gain for Mitigating Gate Voltage Oscillations During Short Circuit
Reigosa, Paula Diaz
Iannuzzo, Francesco
Corvasce, Chiara
Rahimo, Munaf
[J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 7 (03) : 1584 - 1592
[29] Evolution in IGBT's protection against short circuit behaviors by gate-side circuitry
Pagano, R
Raciti, A
[J]. ISIE 2002: PROCEEDINGS OF THE 2002 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, VOLS 1-4, 2002, : 913 - 918
[30] SHORT-CIRCUIT PROTECTION FOR NEGATIVE VOLTAGE SENSOR
PRASAD, SJ
[J]. ELECTRONIC ENGINEERING, 1977, 49 (590): : 30 - 30

← 1 2 3 4 5 →