Design of a Radiation Hardened Power-ON-Reset

被引：6

作者：

Lopez-Morillo, E. ^{[1
]}

Palomo, F. R. ^{[1
]}

Marquez, F. ^{[1
]}

Munoz, F. ^{[1
]}

机构：

[1] Univ Seville, Sch Engn, Dept Elect Engn, Seville 41092, Spain

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 08期

关键词：

Conseil Europeen pour la Recherche Nucleaire (CERN); Large Hadron Collider (LHC); power-ON-reset (POR); radiation hardening by design; RD53; single-event effects (SEEs); total ionizing dose (TID); CMOS TECHNOLOGIES; CIRCUITS;

D O I：

10.1109/TNS.2018.2840326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design of a power-ON-reset intellectual property (IP) block for the RD53 collaboration, a radiation hardening by design circuit to withstand the High-Luminosity Large Hadron Collider tracker radiation environment, is presented. In this environment, the performance of the IP block under radiation must be ensured for a total ionizing dose up to 500 Mrad and possible ions interaction for a linear energy transfer of 15 MeV/cm(2)/mg. To verify the radiation hardness of the presented circuit, an automatic single-event effect sensitivity tool (Analog Fault Tolerant University of Seville Hardware Debugging System) has been used to perform a complete analysis over it, and also several experiments have been performed to test the designed blocks and obtain the final IP qualification.

引用

页码：1943 / 1950

页数：8

共 50 条

[41] Radiation hardened power device-VDMNOSFET
Liu, Y.-K., 2001, Science Press (22):
[42] Design For Test of Radiation-Hardened SOC
Zhang, Shaozhen
Chen, Mo
Mu, Jun
2019 IEEE 4TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2019), 2019, : 252 - 256
[43] Design and Experimental Validation of Radiation Hardened by Design SRAM Cells
Yao, Xiaoyin
Clark, Lawrence T.
Chellappa, Srivatsan
Holbert, Keith E.
Hindman, Nathan D.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (01) : 258 - 265
[44] Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications
Pal, Soumitra
Sri, Dodla Divya
Ki, Wing-Hung
Islam, Aminul
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 68 (06) : 2147 - 2151
[45] Responses of radiation-hardened power MOSFETs to neutrons
Gillberg, JE
Burton, DI
Titus, JL
Wheatley, CF
Hubbard, N
2001 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2001, : 160 - 166
[46] Total dose radiation hardened power VDMOS device
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
不详
Dianzi Keji Diaxue Xuebao, 2008, 4 (621-623):
[47] Radiation Hardened Design of Pipeline and Register File in Processor
Xiao, Li-Yi
Wang, Yuan-Gang
Zhang, Zu-Qiang
Li, Jia-Qiang
Li, Jie
2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2019,
[48] Design of Radiation Hardened Inverter using CMOS Process
Shah, Jinal
Senjaliya, Chirag
Devashrayee, Niranjan M.
Gajjar, Nagendra
PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON COMMUNICATION AND ELECTRONICS SYSTEMS (ICCES 2018), 2018, : 346 - 349
[49] A Radiation Hardened by Design Charge Pump for Flash Memories
Bellotti, Giovanni
Liberali, Valentino
Stabile, Alberto
Gregori, Stefano
2013 14TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2013,
[50] Radiation-hardened Test Design for Aerospace SoC
Cheng, Dan
Qi, Dan
Chen, Mo
2020 THE 5TH IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2020), 2020, : 213 - 217

← 1 2 3 4 5 →