Design Considerations for Monolithically Integrated Fully-Depleted CMOS Image Sensors

被引：0
|
作者：
Lincelles, J. B. [1 ]
Marcelot, O. [1 ]
Magnan, P. [1 ]
Saint-Pe, O. [2 ]
机构：
[1] ISAE, Integrated Image Sensor Lab, Toulouse, France
[2] Airbus Def & Space, Toulouse, France
来源：
2014 10TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME 2014) | 2014年
关键词：
CMOS image sensor; fully-depleted; high resistivity silicon;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a design study for the fabrication of a fully depleted CMOS image sensor integrated on high-resistivity epitaxial layer. Both models and simulations are used and show that the maximal depleted thickness and the punch-trough current are dependent on the photo-diode cathode length. From these considerations, achievable performances are estimated.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Noise analysis of a fully integrated CMOS image sensor
    Singh, K
    SENSORS, CAMERAS, AND APPLICATIONS FOR DIGITAL PHOTOGRAPHY, 1999, 3650 : 44 - 51
  • [42] Silicon Nanowires Integrated in a Fully Depleted CMOS Process for Charge Based Biosensing
    Jayakumar, G.
    Asadollahi, A.
    Hellstrom, P-E
    Garidis, K.
    Ostling, M.
    2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, : 81 - 84
  • [43] A Monolithically Integrated 640 x 512 CMOS-Perovskite Image Sensor
    Wang, Xiaochen
    Ning, Hao
    Hui, Guangcai
    Li, Yunlong
    Xie, Yongliang
    Lin, Jiangming
    Zhuo, Cheng
    Bodepudi, Srikrishna Chanakya
    Wang, Yong
    Yu, Bin
    Xu, Yang
    2024 50TH IEEE EUROPEAN SOLID-STATE ELECTRONICS RESEARCH CONFERENCE, ESSERC 2024, 2024, : 213 - 216
  • [44] Sub-45nm Fully-Depleted SOI CMOS Subthreshold Logic for Ultra-Low-Power Applications
    Bol, D.
    Ambroise, R.
    Flandre, D.
    Legat, J. -D.
    2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2008, : 57 - 58
  • [45] Radiation Hardness Study on a Fully Depleted Pinned Photodiode CMOS Image Sensor
    Meng, Xiao
    Stefanov, Konstantin D.
    Holland, Michael A.
    Holland, Andrew D.
    2019 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2019,
  • [46] Monte Carlo simulations of Fully Depleted CMOS pixel sensors for radiation detection applications
    Ferrero, Chiara
    Neubuser, Coralie
    Pancheri, Lucio
    Rivetti, Angelo
    2023 18TH CONFERENCE ON PH.D RESEARCH IN MICROELECTRONICS AND ELECTRONICS, PRIME, 2023, : 101 - 104
  • [47] Noise considerations in low voltage CMOS integrated temperature sensors
    Ferri, G
    D'Amico, A
    Di Natale, C
    SENSORS AND ACTUATORS A-PHYSICAL, 2000, 85 (1-3) : 232 - 238
  • [48] Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias
    Stefanov, Konstantin D.
    Clarke, Andrew S.
    Holland, Andrew D.
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (01) : 64 - 66
  • [49] Design of Prototype Scientific CMOS Image Sensors
    Vu, Paul
    Fowler, Boyd
    Liu, Chiao
    Balicki, Janusz
    Mims, Steve
    Do, Hung
    Laxson, Dan
    High Energy, Optical, and Infrared Detectors for Astronomy III, 2008, 7021
  • [50] Design and characterization of CMOS/SOI image sensors
    Brouk, Igor
    Alameh, Kamal
    Nemirovsky, Yael
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (03) : 468 - 475
12345