Design Considerations for Monolithically Integrated Fully-Depleted CMOS Image Sensors

被引：0
|
作者：
Lincelles, J. B. [1 ]
Marcelot, O. [1 ]
Magnan, P. [1 ]
Saint-Pe, O. [2 ]
机构：
[1] ISAE, Integrated Image Sensor Lab, Toulouse, France
[2] Airbus Def & Space, Toulouse, France
来源：
2014 10TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME 2014) | 2014年
关键词：
CMOS image sensor; fully-depleted; high resistivity silicon;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a design study for the fabrication of a fully depleted CMOS image sensor integrated on high-resistivity epitaxial layer. Both models and simulations are used and show that the maximal depleted thickness and the punch-trough current are dependent on the photo-diode cathode length. From these considerations, achievable performances are estimated.
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页数：4
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