Improved contact resistance in ReSe2 thin film field-effect transistors

被引：23

作者：

Corbet, Chris M. ^{[1
]}

Sonde, Sushant S. ^{[1
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, 10100 Burnet Rd, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 16期

关键词：

TRANSITION-METAL DICHALCOGENIDES; FEW-LAYER; INPLANE ANISOTROPY; SEMICONDUCTOR; RHENIUM; PHOTODETECTORS; SPECTROSCOPY; MONOLAYER; GRAPHENE; MOS2;

D O I：

10.1063/1.4947468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and device characteristics of exfoliated, few-layer, ReSe2 field effect transistors (FET) and a method to improve contact resistance by up to three orders of magnitude using ultra-high-vacuum annealing (UHV). Many devices were studied in the absence of light and we found an average contact of 750 Omega . cm after UHV treatment. The median FET metrics were similar to other transition metal dichalcogenides: field effect mobility similar to 6.7 cm(2)/V . s, subthreshold swing similar to 1.2 V/decade, and I-on/I-off similar to 10(5). In devices with low R-c current saturation was observed and is attributed to injection limited transport. Published by AIP Publishing.

引用

页数：4

共 50 条

[41] H2O effect on the stability of organic thin-film field-effect transistors
Qiu, Y
Hu, YC
Dong, GF
Wang, LD
Xie, JF
Ma, YN
APPLIED PHYSICS LETTERS, 2003, 83 (08) : 1644 - 1646
[42] Contact effects in polymer field-effect transistors
Natelson, D.
Hamadani, B. H.
Ciszek, J. W.
Corley, D. A.
Tour, J. M.
ORGANIC FIELD-EFFECT TRANSISTORS V, 2006, 6336
[43] Azafullerene (C59N)2 thin-film field-effect transistors
Kumashiro, R
Tanigaki, K
Ohashi, H
Tagmatarchis, N
Kato, H
Shinohara, H
Akasaka, T
Kato, K
Aoyagi, S
Kimura, S
Takata, M
APPLIED PHYSICS LETTERS, 2004, 84 (12) : 2154 - 2156
[44] Contact engineering in organic field-effect transistors
Liu, Chuan
Xu, Yong
Noh, Yong-Young
MATERIALS TODAY, 2015, 18 (02) : 79 - 96
[45] Intrinsic transport and contact resistance effect in C60 field-effect transistors
Matsuoka, Yukitaka
Uno, Koichi
Takahashi, Nobuya
Maeda, Akira
Inami, Nobuhito
Shikoh, Eiji
Yamamoto, Yoshiyuki
Hori, Hidenobu
Fujiwara, Akihiko
APPLIED PHYSICS LETTERS, 2006, 89 (17)
[46] Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect Transistors
Kim, Chang Hyun
Bonnassieux, Yvan
Horowitz, Gilles
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 280 - 287
[47] Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping
Hou, Ji-Ling
Kasemann, Daniel
Widmer, Johannes
Guenther, Alrun A.
Luessem, Bjoern
Leo, Karl
APPLIED PHYSICS LETTERS, 2016, 108 (10)
[48] Mechanism behind Improved Apparent Field-Effect Mobility in Pentacene Thin-Film Transistors with Thin Molybdenum Trioxide Layer
Minagawa, Masahiro
Sato, Yasuo
Takahashi, Akira
Baba, Akira
Shinbo, Kazunari
Kato, Keizo
Kaneko, Futao
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (10)
[49] A Study on Contact Resistance as a Function of Surface Treatment in Perovskite Field-Effect Transistors
Tyznik, Colin
Waldrip, Matthew
Sullivan, Ryan P.
Mirhosseini, Motahhare
Berry, Adam
Dwyer, Sean
Cakir, Hurriyet Yuce
Coffey, Tonya
Loo, Yueh-Lin
Jurchescu, Oana D.
ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (10) : 5343 - 5351
[50] Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors
Nagashio, Kosuke
Toriumi, Akira
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)

← 1 2 3 4 5 →