Improved contact resistance in ReSe2 thin film field-effect transistors

被引：23

作者：

Corbet, Chris M. ^{[1
]}

Sonde, Sushant S. ^{[1
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, 10100 Burnet Rd, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 16期

关键词：

TRANSITION-METAL DICHALCOGENIDES; FEW-LAYER; INPLANE ANISOTROPY; SEMICONDUCTOR; RHENIUM; PHOTODETECTORS; SPECTROSCOPY; MONOLAYER; GRAPHENE; MOS2;

D O I：

10.1063/1.4947468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and device characteristics of exfoliated, few-layer, ReSe2 field effect transistors (FET) and a method to improve contact resistance by up to three orders of magnitude using ultra-high-vacuum annealing (UHV). Many devices were studied in the absence of light and we found an average contact of 750 Omega . cm after UHV treatment. The median FET metrics were similar to other transition metal dichalcogenides: field effect mobility similar to 6.7 cm(2)/V . s, subthreshold swing similar to 1.2 V/decade, and I-on/I-off similar to 10(5). In devices with low R-c current saturation was observed and is attributed to injection limited transport. Published by AIP Publishing.

引用

页数：4

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