Improved contact resistance in ReSe2 thin film field-effect transistors

被引：23

作者：

Corbet, Chris M. ^{[1
]}

Sonde, Sushant S. ^{[1
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, 10100 Burnet Rd, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 16期

关键词：

TRANSITION-METAL DICHALCOGENIDES; FEW-LAYER; INPLANE ANISOTROPY; SEMICONDUCTOR; RHENIUM; PHOTODETECTORS; SPECTROSCOPY; MONOLAYER; GRAPHENE; MOS2;

D O I：

10.1063/1.4947468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and device characteristics of exfoliated, few-layer, ReSe2 field effect transistors (FET) and a method to improve contact resistance by up to three orders of magnitude using ultra-high-vacuum annealing (UHV). Many devices were studied in the absence of light and we found an average contact of 750 Omega . cm after UHV treatment. The median FET metrics were similar to other transition metal dichalcogenides: field effect mobility similar to 6.7 cm(2)/V . s, subthreshold swing similar to 1.2 V/decade, and I-on/I-off similar to 10(5). In devices with low R-c current saturation was observed and is attributed to injection limited transport. Published by AIP Publishing.

引用

页数：4

共 50 条

[31] Contact resistance in organic thin film transistors
Blanchet, GB
Fincher, CR
Lefenfeld, M
Rogers, JA
APPLIED PHYSICS LETTERS, 2004, 84 (02) : 296 - 298
[32] Contact resistance in organic thin film transistors
Klauk, H
Schmid, G
Radlik, W
Weber, W
Zhou, LS
Sheraw, CD
Nichols, JA
Jackson, TN
SOLID-STATE ELECTRONICS, 2003, 47 (02) : 297 - 301
[33] Photosensitive properties of α-IGZO thin-film field-effect transistors
Yang, S.-Y. (syyang@bit.edu.cn), 1600, Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China (24):
[34] Contact resistance in pentacene thin film transistors
Necliudov, PV
Shur, MS
Gundlach, DJ
Jackson, TN
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 345 - 348
[35] Contact resistance in organic thin film transistors
Petrovic, Andraz
Pavlica, E.
Bratina, Gvido
Carpentiero, Alessandro
Tormen, Massimo
SYNTHETIC METALS, 2009, 159 (12) : 1210 - 1214
[36] Field-effect mobility of organic polymer thin-film transistors
Hamilton, MC
Martin, S
Kanicki, J
CHEMISTRY OF MATERIALS, 2004, 16 (23) : 4699 - 4704
[37] Thermionic Injection and Contact Resistance Model for Bottom Contact Organic Field-Effect Transistors
Saikh, Samayun
Rajan, Nikhitha
Mukherjee, Ayash Kanto
JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (06) : 2842 - 2851
[38] Analysis of Contact Resistance Effect on Performance of Organic Thin Film Transistors
Kumar, Brijesh
Kaushik, B. K.
Negi, Y. S.
2012 INTERNATIONAL SYMPOSIUM ON ELECTRONIC SYSTEM DESIGN (ISED 2012), 2012, : 198 - 202
[39] Contact effects and extraction of intrinsic parameters in poly(3-alkylthiophene) thin film field-effect transistors
Deen, M. Jamal
Kazemeini, Mehdi H.
Holdcroft, S.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (12)
[40] Top Contact Pentacene Organic Thin Film Field Effect Transistors
ZHANG Su-mei~1
2. Changchun Institute of Appl. Chem.
Semiconductor Photonics and Technology, 2004, (04) : 265 - 267

← 1 2 3 4 5 →