Plasma damage reduction by using ISSG gate oxides

被引：1
|
作者：
Cellere, G [1 ]
Valentini, MG [1 ]
Caminati, M [1 ]
Vitali, ME [1 ]
Moro, A [1 ]
Paccagnella, A [1 ]
机构：
[1] Univ Padua, Dipartimento Elettr & Informat, Padua, Italy
来源：
2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE | 2003年
关键词：
D O I：
10.1109/PPID.2003.1200916
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：65 / 68
页数：4
相关论文
共 50 条
  • [21] A novel method for selective oxidation of W/WNx/Poly gate stack using RTP ISSG technique
    Joo, HS
    Ng, B
    Lopes, D
    Miner, G
    ULSI PROCESS INTEGRATION, 1999, 99 (18): : 203 - 209
  • [22] Plasma damage and photo-annealing effects of thin gate oxides and oxynitrides during O-2 plasma exposure
    Lai, KF
    Kumar, K
    Chou, A
    Lee, JC
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) : 82 - 84
  • [23] Plasma damage and photo-annealing effects of thin gate oxides and oxynitrides during O2 plasma exposure
    Rockwell Int, Newport Beach, United States
    IEEE Electron Device Lett, 3 (82-84):
  • [24] Reduction of plasma process-induced damage during gate poly etching by using a SiO2 hard mask
    Lee, HC
    Creusen, M
    Groeseneken, G
    Vanhaelemeersch, S
    1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1998, : 72 - 75
  • [25] Hydrogen plasma reduction of iron oxides
    Zhang, Jianzhi
    Peng, Zhiwei
    Zhang, Tong
    Fan, Wanlong
    Luo, Guanwen
    INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2025, 105 : 910 - 920
  • [26] Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides
    Chen, CC
    Lin, HC
    Chang, CY
    Chao, TS
    Huang, TY
    Liang, MS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (08): : 4733 - 4737
  • [27] Charging damage in thin gate-oxides - Better or worse?
    Cheung, KP
    Liu, CT
    Chang, CP
    Colonell, JI
    Lai, WYC
    Pai, C
    Vaidya, H
    Liu, R
    Clemens, JT
    Hasegawa, E
    1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1998, : 34 - 37
  • [28] Reduction of plasma-induced gate oxide damage using low-energy large-mass ion bombardment in gate-metal sputtering deposition
    Ushiki, T
    Yu, MC
    Kawai, K
    Shinohara, T
    Ino, K
    Morita, M
    Ohmi, T
    1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 307 - 311
  • [29] Scalability of plasma damage with gate oxide thickness
    Bayoumi, A
    Ma, SM
    Langley, B
    Cox, M
    Tavassoli, M
    Diaz, C
    Cao, M
    Marcoux, P
    Ray, G
    Greene, W
    1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1997, : 11 - 14
  • [30] Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
    Michael Geiger
    Marion Hagel
    Thomas Reindl
    Jürgen Weis
    R. Thomas Weitz
    Helena Solodenko
    Guido Schmitz
    Ute Zschieschang
    Hagen Klauk
    Rachana Acharya
    Scientific Reports, 11
12345