Plasma damage reduction by using ISSG gate oxides

被引：1
|
作者：
Cellere, G [1 ]
Valentini, MG [1 ]
Caminati, M [1 ]
Vitali, ME [1 ]
Moro, A [1 ]
Paccagnella, A [1 ]
机构：
[1] Univ Padua, Dipartimento Elettr & Informat, Padua, Italy
来源：
2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE | 2003年
关键词：
D O I：
10.1109/PPID.2003.1200916
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：65 / 68
页数：4
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