Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

被引：8
|
作者：
Matsutani, Akihiro [1 ]
Ishiwari, Fumitaka [2 ]
Shoji, Yoshiaki [2 ]
Kajitani, Takashi [2 ]
Uehara, Takuya [3 ]
Nakagawa, Masaru [3 ]
Fukushima, Takanori [2 ]
机构：
[1] Tokyo Inst Technol, Div Microprocessing Technol Platform, Tech Dept, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Inst Innovat Res, Lab Chem & Life Sci, Yokohama, Kanagawa 2268503, Japan
[3] Tohoku Univ, IMRAM, Sendai, Miyagi 9808577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 06期
关键词：
ATTENUATED TOTAL REFLECTION; ELECTRON-BEAM LITHOGRAPHY; HIGH-RESOLUTION; DEEP-UV; PHOTORESIST; NANOLITHOGRAPHY; SENSITIVITY; FABRICATION; CL-2/XE; FILMS;
D O I：
10.7567/JJAP.55.06GL01
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the etching properties of tripodal paraffinic triptycene (TripC(12)) used as a thermal nanoimprint lithography (TNIL) resist mask in Cl-2 plasma etching. Using thermally nanoimprinted TripC(12) films, we achieved microfabrication of a GaAs substrate by Cl-2-based inductively coupled plasma (ICP) etching. Attenuated total reflection Fourier transform infrared (ATR- FTIR) spectroscopy confirmed that the chemical structure of TripC(12) remains intact after the ICP etching process using Cl-2. We believe that TNIL using TripC(12) films is useful for fabricating optical/electrical devices and micro-electro-mechanical systems (MEMSs). (C) 2016 The Japan Society of Applied Physics
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页数：3
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