Etching and micro-optics fabrication in diamond using chlorine-based inductively-coupled plasma

被引：89

作者：

Lee, C. L. ^{[1
]}

Gu, E. ^{[1
]}

Dawson, M. D. ^{[1
]}

Friel, I. ^{[2
]}

Scarsbrook, G. A. ^{[2
]}

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[2] Element Six Ltd, Ascot SL5 8BP, Berks, England

来源：

关键词：

ICP etch; chlorine-based plasma; micro-optics; surface smoothing;

D O I：

10.1016/j.diamond.2008.01.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of Inductively-Coupled Plasma (ICP) etching on diamond using chlorine-based plasma has been investigated. The diamond materials studied include type IIa natural diamond, High Pressure and High Temperature (HPHT) diamond and Chemical Vapour Deposition (CVD) diamond, It was found that argon and chlorine (Ar/Cl-2) ICP plasma etching can improve the smoothness of the diamond surface. By using this method, a minimum root-meansquared (rms) surface roughness of 0.19 nm has been achieved. To demonstrate optimized Ar/Cl-2 plasma etching, diamond spherical micro-lenses and micro-trenches were fabricated. Compared to argon and oxygen (Ar/O-2) plasma etching, Ar/Cl-2 plasma etching has a low selectivity with respect to the photo-resist mask, which enables an accurate control over the dimensions of the microstructures fabricated. The surface quality and profiles of these microlenses and micro-trenches were characterized by atomic force microscopy (AFM) and were shown to be better than those fabricated by Ar/O-2 ICP plasma. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1292 / 1296

页数：5

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