Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

被引：8

作者：

Matsutani, Akihiro ^{[1
]}

Ishiwari, Fumitaka ^{[2
]}

Shoji, Yoshiaki ^{[2
]}

Kajitani, Takashi ^{[2
]}

Uehara, Takuya ^{[3
]}

Nakagawa, Masaru ^{[3
]}

Fukushima, Takanori ^{[2
]}

机构：

[1] Tokyo Inst Technol, Div Microprocessing Technol Platform, Tech Dept, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Inst Innovat Res, Lab Chem & Life Sci, Yokohama, Kanagawa 2268503, Japan

[3] Tohoku Univ, IMRAM, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 06期

关键词：

ATTENUATED TOTAL REFLECTION; ELECTRON-BEAM LITHOGRAPHY; HIGH-RESOLUTION; DEEP-UV; PHOTORESIST; NANOLITHOGRAPHY; SENSITIVITY; FABRICATION; CL-2/XE; FILMS;

D O I：

10.7567/JJAP.55.06GL01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the etching properties of tripodal paraffinic triptycene (TripC(12)) used as a thermal nanoimprint lithography (TNIL) resist mask in Cl-2 plasma etching. Using thermally nanoimprinted TripC(12) films, we achieved microfabrication of a GaAs substrate by Cl-2-based inductively coupled plasma (ICP) etching. Attenuated total reflection Fourier transform infrared (ATR- FTIR) spectroscopy confirmed that the chemical structure of TripC(12) remains intact after the ICP etching process using Cl-2. We believe that TNIL using TripC(12) films is useful for fabricating optical/electrical devices and micro-electro-mechanical systems (MEMSs). (C) 2016 The Japan Society of Applied Physics

引用

页数：3

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