共 50 条
- [3] Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (03): : 879 - 881
- [5] Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl2/BCl3/O2/Ar chemistry [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (02):
- [7] Highly selective dry etching of III nitrides using an inductively coupled Cl2/Ar/O2 plasma [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1409 - 1411
- [8] Volume and heterogeneous chemistry in Cl2/Ar inductively coupled plasma [J]. MICRO- AND NANOELECTRONICS 2003, 2004, 5401 : 64 - 71
- [10] Inductively coupled plasma etching of III-nitrides in Cl2/Xe, Cl2/Ar and Cl2/He [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G6.56