Inductively coupled plasma etching of GaAs in Cl2/Ar, Cl2/Ar/O2 chemistries with photoresist mask

被引：9

作者：

Liu, Kai ^{[1
]}

Ren, Xiao-min ^{[1
]}

Huang, Yong-qing ^{[1
]}

Cai, Shi-wei ^{[1
]}

Duan, Xiao-feng ^{[1
]}

Wang, Qi ^{[1
]}

Kang, Chao ^{[1
]}

Li, Jun-shuai ^{[1
]}

Chen, Qing-tao ^{[1
]}

Fei, Jia-rui ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2015年 / 356卷

基金：

中国国家自然科学基金;

关键词：

GaAs; Inductively coupled plasma etching; Cl-2; O-2; Etching rate ratio; III-V SEMICONDUCTORS; MECHANISM; ARRAYS; DAMAGE; AR;

D O I：

10.1016/j.apsusc.2015.08.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we proposed our recent works on inductively coupled plasma (ICP) etching of GaAs in Cl-2/Ar and Cl-2/Ar/O-2 chemistry for pattern structure transferring and analyzed their etching mechanism. It is proposed that the etching rate reduction due to introduction of extra Cl-2 and additional O-2 in the plasma chemistry is resulted from their influences on all ICP etching process aspects. Moreover, with results presented here, it shows that by introducing O-2 into plasma chemistry, the etched GaAs surface roughness will be optimized and the etching ratio of photoresist to GaAs will be tuned. (C) 2015 Published by Elsevier B.V.

引用

页码：776 / 779

页数：4

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