A ZnO/SiO2/Si (100) love mode transducer

被引：0
|
作者：
Kalantar-zadeh, K [1 ]
Wlodarski, W [1 ]
Holland, A [1 ]
Reeves, G [1 ]
机构：
[1] RMIT Univ, Sch Elect & Comp Syst Engn, Melbourne, Vic 3001, Australia
来源：
COMMAD 2000 PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/COMMAD.2000.1022966
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
ZnO/SiO2/Si(100) Love mode transducers were fabricated. SiO2 films were deposited using electron beam evaporation. ZnO films were deposited using r.f. magnetron sputtering. ZnO and SiO2 films were examined by SEM and the performance of the transducers was examined by their acoustic response. The observation of the SAW Love mode delay fine was performed under untuned conditions. Operating frequencies of the transducers were around 85 MHz.
引用
收藏
页码：367 / 370
页数：4
相关论文
共 50 条
  • [31] Calculation of boron segregation at the Si(100)/SiO2 interface
    Furuhashi, M
    Hirose, T
    Tsuji, H
    Tachi, M
    Taniguchi, K
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 163 - 166
  • [32] Density relative change and interface zone mutual diffusion of BiFeO3 films prepared on Si (100), SiO2 and SiO2/Si (100)
    Xiao, RenZheng
    Wang, ZeSong
    Yuan, XianBao
    Zhou, JianJun
    Mao, ZhangLiang
    Su, HuaShan
    Li, Bo
    Fu, DeJun
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 384 : 106 - 112
  • [33] Characterization of F2 treatment effects on Si(100) surface and Si(100)/SiO2 interface
    Kanashima, Takeshi
    Kurioka, Yoshiaki
    Imai, Takaaki
    Yamamoto, Hideaki
    Okuyama, Masanori
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (4 B): : 2460 - 2463
  • [34] Characterization of F-2 treatment effects on Si(100) surface and Si(100)/SiO2 interface
    Kanashima, T
    Kurioka, Y
    Imai, T
    Yamamoto, H
    Okuyama, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (4B): : 2460 - 2463
  • [35] Optical switching of single-electron tunneling in SiO2/molecule/SiO2 multilayer on Si(100)
    Wakayama, Y
    Ogawa, K
    Kubota, T
    Suzuki, H
    Kamikado, T
    Mashiko, S
    APPLIED PHYSICS LETTERS, 2004, 85 (02) : 329 - 331
  • [36] Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface
    Miyazaki, S
    Tamura, T
    Ogasawara, M
    Itokawa, H
    Murakami, H
    Hirose, M
    APPLIED SURFACE SCIENCE, 2000, 159 : 75 - 82
  • [37] Room temperature preparation of c axis oriented ZnO films on Si(100),SiO2, and ZnO substrates by rf magnetron sputtering
    Kim, NH
    Kim, HW
    BRITISH CERAMIC TRANSACTIONS, 2004, 103 (01): : 15 - 18
  • [38] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
    Ming, Z
    Nakajima, K
    Suzuki, M
    Kimura, K
    Uematsu, M
    Torii, K
    Kamiyama, S
    Nara, Y
    Yamada, K
    APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [39] SiO2/Si衬底制备ZnO薄膜及表征
    曹亮亮
    叶志镇
    张阳
    朱丽萍
    张银珠
    徐伟中
    赵炳辉
    真空科学与技术学报, 2005, (03) : 164 - 167
  • [40] Synthesis of ZnO nanocrystals in α-SiO2/Si ion track templates
    Dauletbekova, A.
    Kozlovskyi, A.
    Akilbekov, A.
    Seitbayev, A.
    Alzhanova, A.
    SURFACE & COATINGS TECHNOLOGY, 2018, 355 : 11 - 15
12345