Fabrication of nanoelectromechanical resonators using a cryogenic etching technique

被引:3
|
作者
Nelson-Fitzpatrick, N. [1 ]
Westra, K.
Li, P.
McColman, S.
Wilding, N.
Evoy, S.
机构
[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada
[2] Univ Alberta, Natl Inst Nanotechnol, Edmonton, AB T6G 2V4, Canada
[3] Univ Alberta, NanoFab, Edmonton, AB T6G 2V4, Canada
[4] Appl Nanotools Inc, Edmonton, AB T6E 5B6, Canada
来源
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1116/1.2366608
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The details of the fabrication of nanomechanical resonators through cryogenic etching methodology is described. The cryogenic etching is conducted in an Oxford Plasmalab 100 DRIE system. The instrument is equipped with a liquid nitrogen cooled chuck and a temperature controller to maintain the temperature of the silicon wafer at a set value. The etching process consists of four steps. The wafer is loaded into the plasma reactor and rested on the cooled chuck for five minute to achieve the desired temperature. An O2 plasma is run for 10 seconds to clean the silicon substrate and prepare it for etching. The SF6/O2 etching plasma is lit to etch the substrate. A helium release step is used to ensure that the process wafer is not stuck to the cooled chuck. Control over the relative strength of passivation and the etch steps has enabled the machining of high-aspect-ratio NEMS with lateral dimensions as small as 150 nm.
引用
收藏
页码:2769 / 2771
页数:3
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