Bonding and hardness in nonhydrogenated carbon films with moderate sp3 content

被引：45
|
作者：
Gago, R
Jiménez, I
Albella, JM
Climent-Font, A
Cáceres, D
Vergara, I
Banks, JC
Doyle, BL
Terminello, LJ
机构：
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Dept Fis Aplicada C12, E-28049 Madrid, Spain
[3] Univ Carlos III Madrid, Dept Fis Aplicada, Leganes 28911, Spain
[4] Sandia Natl Labs, Radiat Solid Interact & Proc, Albuquerque, NM 87185 USA
[5] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[6] Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 11期
关键词：
D O I：
10.1063/1.373514
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous carbon films with an sp(3) content up to 25% and a negligible amount of hydrogen have been grown by evaporation of graphite with concurrent Ar+ ion bombardment. The sp(3) content is maximized for Ar+ energies between 200 and 300 eV following a subplantation mechanism. Higher ion energies deteriorate the film due to sputtering and heating processes. The hardness of the films increases in the optimal assisting range from 8 to 18 GPa, and is explained by crosslinking of graphitic planes through sp(3) connecting sites. (C) 2000 American Institute of Physics. [S0021-8979(00)08911-8].
引用
收藏
页码：8174 / 8180
页数：7
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