High quality 4H-SiC grown on various substrate orientations

被引：5

作者：

Henry, A ^{[1
]}

Ivanov, IG ^{[1
]}

Egilsson, T ^{[1
]}

Hallin, C ^{[1
]}

Ellison, A ^{[1
]}

Kordina, O ^{[1
]}

Lindefelt, U ^{[1
]}

Janzen, E ^{[1
]}

机构：

[1] ABB CORP RES, S-72178 VASTERAS, SWEDEN

来源：

关键词：

4H-SiC; c-axis; a-axis; photoluminescence;

D O I：

10.1016/S0925-9635(97)00105-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of 4H epilayers has been achieved by chemical vapour deposition on various substrate orientations which were on-(0001) oriented, off axis (3.5 degrees- and 8 degrees-off towards the (11 (2) over bar 0) direction) and a-cut, both (11 (2) over bar 0) and (10 (1) over bar 0)-oriented material. Various characterisation techniques have been used to assess the epilayer quality such as optical microscopy, X-ray diffraction, and mainly photoluminescence spectroscopy. (C) 1997 Elsevier Science S.A.

引用

页码：1289 / 1292

页数：4

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