High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD

被引：2

作者：

Wu Hailei ^{[1
]}

Sun Guosheng ^{[1
]}

Yang Ting ^{[1
]}

Yan Guoguo ^{[1
]}

Wang Lei ^{[1
]}

Zhao Wanshun ^{[1
]}

Liu Xingfang ^{[1
]}

Zeng Yiping ^{[1
]}

Wen Jialiang ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China

[2] China Elect Power Res Inst, Beijing 100192, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 04期

基金：

中国国家自然科学基金;

关键词：

4H-SiC; homoepitaxial growth; vertical hot wall CVD; crystal morphology;

D O I：

10.1088/1674-4926/32/4/043005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High quality, homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC (0001) Si planes in a vertical low-pressure hot-wall CVD system (LPCVD) by using trichlorosilane (TCS) as a silicon precursor source together with ethylene (C2H4) as a carbon precursor source. The growth rate of 25-30 mu m/h has been achieved at lower temperatures between 1500 and 1530 degrees C. The surface roughness and crystalline quality of 50 mu m thick epitaxial layers (grown for 2 h) did not deteriorate compared with the corresponding results of thinner layers (grown for 30 min). The background doping concentration was reduced to 2.13 x 10(15) cm(3). The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.

引用

页数：4

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