High growth rate epitaxy of thick 4H-SiC layers

被引：6
|
作者：
Syväjärvi, M [1 ]
Yakimova, R
Jacobsson, H
Linnarsson, MK
Henry, A
Janzén, E
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
[2] Okmet AB, SE-17824 Ekero, Sweden
[3] Royal Inst Technol, Dept Solid State Elect, SE-16440 Stockholm, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
doping; epitaxy; purity; semi-insulating;
D O I：
10.4028/www.scientific.net/MSF.338-342.165
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Sublimation epitaxy for fabrication of thick 4H-SiC layers has been studied with respect to surface morphology, structural quality, and purity. The surface morphology of thick (50-100 mum) epilayers is smooth, even though the growth rate was 100 mum/h. These surfaces are obtained within a parameter window for morphological stability. The structural perfection is confirmed by high-resolution X-Ray diffraction measurements and the epilayer quality is improved compared with the substrate. The limitation in purity is dependent mainly on the purity of the SiC source material. The growth system purity, mainly graphite and Ta parts of the growth crucible, is also of major importance. Results from intentional doping for high-resistive, semi-insulating and p-type material are presented.
引用
收藏
页码：165 / 168
页数：4
相关论文
共 50 条
  • [1] High growth rate epitaxy of thick 4H-SiC layers
    Syvajarvi, M., 2000, Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland (338)
  • [2] Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers
    Niu, Yingxi
    Tang, Xiaoyan
    Wu, Pengfei
    Kong, Lingyi
    Li, Yun
    Xia, Jinghua
    Tian, Honglin
    Tian, Liang
    Tian, Lixin
    Zhang, Wenting
    Jia, Renxu
    Yang, Fei
    Wu, Junmin
    Pan, Yan
    Zhang, Yuming
    JOURNAL OF CRYSTAL GROWTH, 2019, 507 : 143 - 145
  • [3] Growth of thick epitaxial 4H-SiC layers by chemical vapor deposition
    Kordina, O
    Irvine, K
    Sumakeris, J
    Kong, HS
    Paisley, MJ
    Carter, CH
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 107 - 110
  • [4] Growth of thick epitaxial 4H-SiC layers by chemical vapor deposition
    Cree Research, Inc, Durham, United States
    Mater Sci Forum, pt 1 (107-110):
  • [5] Growth of device quality 4H-SiC by high velocity epitaxy
    Yakimova, R
    Syväjärvi, M
    Ciechonski, RR
    Wahab, Q
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 201 - 204
  • [6] High quality uniform thick epitaxy of 4H-SiC for high power device applications
    Zhang, Jie
    Mazzola, Janice
    Romano, Esteban
    Hoff, Carl
    Mazzola, Mike
    Casady, Janna
    Casady, Jeff
    SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 107 - +
  • [7] Initial results on thick 4H-SiC epitaxial layers grown using vapor phase epitaxy
    Rowland, LB
    Dunne, GT
    Freitas, JA
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 161 - 164
  • [8] 4H-SiC layers grown by liquid phase epitaxy on 4H-SiC off-axis substrates
    Kuznetsov, N
    Morozov, A
    Bauman, D
    Ivantsov, V
    Sukhoveev, V
    Nikitina, I
    Zubrilov, A
    Rendakova, S
    Dimitriev, VA
    Hofman, D
    Masri, P
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 229 - 232
  • [9] High-resolution XRD evaluation of thick 4H-SiC epitaxial layers
    Jacobsson, H
    Yakimova, R
    Syväjärvi, M
    Birch, J
    Tuomi, T
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 291 - 294
  • [10] High-resolution XRD evaluation of thick 4H-SiC epitaxial layers
    Jacobsson, H.
    Yakimova, R.
    Syväjärvi, M.
    Birch, J.
    Tuomi, T.
    Janzén, E.
    Materials Science Forum, 2001, 353-356 : 291 - 294
12345