High quality 4H-SiC grown on various substrate orientations

被引：5
|
作者：
Henry, A [1 ]
Ivanov, IG [1 ]
Egilsson, T [1 ]
Hallin, C [1 ]
Ellison, A [1 ]
Kordina, O [1 ]
Lindefelt, U [1 ]
Janzen, E [1 ]
机构：
[1] ABB CORP RES, S-72178 VASTERAS, SWEDEN
来源：
DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 10期
关键词：
4H-SiC; c-axis; a-axis; photoluminescence;
D O I：
10.1016/S0925-9635(97)00105-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Growth of 4H epilayers has been achieved by chemical vapour deposition on various substrate orientations which were on-(0001) oriented, off axis (3.5 degrees- and 8 degrees-off towards the (11 (2) over bar 0) direction) and a-cut, both (11 (2) over bar 0) and (10 (1) over bar 0)-oriented material. Various characterisation techniques have been used to assess the epilayer quality such as optical microscopy, X-ray diffraction, and mainly photoluminescence spectroscopy. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：1289 / 1292
页数：4
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