Resistivity and resistive switching properties of Pr0.7Ca0.3MnO3 thin films

被引：22
|
作者：
Fujimoto, Masayuki
Koyama, Hiroshi
Kobayashi, Shinji
Tamai, Yukio
Awaya, Nobuyoshi
Nishi, Yuji
Suzuki, Toshimasa
机构：
[1] Shizuoka Univ, Grad Sch Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan
[2] Sharp Co Ltd, Tenri, Nara 6328567, Japan
[3] Taiyo Yuden Co, Gunma 3703347, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 24期
关键词：
D O I：
10.1063/1.2404592
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors studied the relationship between electrical resistivity and resistive switching properties in various stoichiometric and nonstoichiometric Pr1-xCaxMnO3 (PCMO) (x=0.3) thin films fabricated by pulsed laser deposition. The resistivity of Pt/PCMO/Pt structured thin films depended mainly on the PCMO deposition temperature, which was related to the crystallinity of the thin films. The highest resistivity was obtained from the lowest deposition temperature (300 degrees C) specimen, and it was amorphous, while higher temperature deposition specimens (500-800 degrees C) showed specific crystallographic orientation depending on the deposition temperature but showed quite low resistivity. Amorphous film deposited at 350 degrees C exhibited monopolar resistive switching when pulses were applied. (c) 2006 American Institute of Physics.
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页数：3
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