Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

被引：16
|
作者：
Kang, Xuanwu [1 ,2 ]
Sun, Yue [2 ,3 ,4 ]
Zheng, Yingkui [2 ]
Wei, Ke [2 ]
Wu, Hao [1 ,2 ]
Zhao, Yuanyuan [2 ]
Liu, Xinyu [2 ]
Zhang, Guoqi [1 ]
机构：
[1] Fudan Univ, Acad Engn & Technol, Inst Future Lighting, Shanghai 200433, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[3] Shenzhen Inst Wide Bandgap Semicond, Shenzhen 518000, Peoples R China
[4] Delft Univ Technol, Dept Microelect, NL-2628 Delft, Netherlands
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 03期
关键词：
GaN; high forward current density; leakage; mesa; quasi; Schottky barrier diode (SBD); transmission-line-pulse (TLP); vertical;
D O I：
10.1109/TED.2021.3050739
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 mu m has achieved a very high ON/OFF current ratio (I-ON/I-OFF) of 10(12) with a low leakage current of similar to 10(-9) A/cm(2) @-10 V, high forward current density of 5.2 kA/cm(2) at 3 V in dc, a low differential specific oN-resistance (R-ON,R-sp) of 0.3 m Omega.cm(2), and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) l-Vtest was carried out and 53 kA/cm 2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.
引用
收藏
页码：1369 / 1373
页数：5
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