A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

被引：7
|
作者：
Chen, Jiabo [1 ]
Song, Xiufeng [1 ]
Liu, Zhihong [1 ]
Duan, Xiaoling [1 ]
Wang, Haiyong [1 ]
Bian, Zhaoke [2 ]
Zhao, Shenglei [1 ]
Zhang, Jincheng [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
[2] China Elect Technol Grp Corp, Res Inst 13, Beijing, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 11期
基金：
中国国家自然科学基金;
关键词：
GaN; quasi-vertical; SBD; fluorine ion implantation; field ring; EDGE TERMINATION; VOLTAGE; RECTIFIER; POWER;
D O I：
10.35848/1882-0786/ac2e9c
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A GaN-on-Si quasi-vertical Schottky barrier diode (SBD) was fabricated with its performance enhanced using fluorine-implanted field rings and sidewall cathodes. F ions induced negative charges and the sidewall electrodes enhanced both the SBD's breakdown and the on-resistance performance. A low specific on-resistance of 1.23 m omega center dot cm(2), a turn-on voltage of 0.54 V, a near unity ideality factor of 1.04, a high on/off ratio of >10(9), and a high breakdown voltage (BV) of 483 V are achieved with a GaN-on-Si quasi-vertical SBD with a 4.5 mu m drift layer. The temperature dependency of the I-V characteristics proves the thermal stability of the proposed SBD.
引用
收藏
页数：4
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  • [1] A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings (vol 14, 116504, 2021)
    Chen, Jiabo
    Song, Xiufeng
    Liu, Zhihong
    Duan, Xiaoling
    Wang, Haiyong
    Bian, Zhaoke
    Zhao, Shenglei
    Zhang, Jincheng
    Hao, Yue
    [J]. APPLIED PHYSICS EXPRESS, 2022, 15 (03)
  • [2] High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination
    Guo, Xiaolu
    Zhong, Yaozong
    He, Junlei
    Zhou, Yu
    Su, Shuai
    Chen, Xin
    Liu, Jianxun
    Gao, Hongwei
    Sun, Xiujian
    Zhou, Qi
    Sun, Qian
    Yang, Hui
    [J]. IEEE ELECTRON DEVICE LETTERS, 2021, 42 (04) : 473 - 476
  • [3] 1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier
    Qin, Yuan
    Xiao, Ming
    Zhang, Ruizhe
    Xie, Qingyun
    Palacios, Tomas
    Wang, Boyan
    Ma, Yunwei
    Kravchenko, Ivan
    Briggs, Dayrl P.
    Hensley, Dale K.
    Srijanto, Bernadeta R.
    Zhang, Yuhao
    [J]. IEEE ELECTRON DEVICE LETTERS, 2023, 44 (07) : 1052 - 1055
  • [4] High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment
    Chen, Jiabo
    Bian, Zhaoke
    Liu, Zhihong
    Ning, Jing
    Duan, Xiaoling
    Zhao, Shenglei
    Wang, Haiyong
    Tang, Qing
    Wu, Yinhe
    Song, Yuqin
    Zhang, Jincheng
    Hao, Yue
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (11)
  • [5] Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2
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    Zhong, Yaozong
    Zhou, Yu
    Su, Shuai
    Chen, Xin
    Yan, Shumeng
    Liu, Jianxun
    Sun, Xiujian
    Sun, Qian
    Yang, Hui
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (11) : 5682 - 5686
  • [6] High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
    Qingyuan CHANG
    Bin HOU
    Ling YANG
    Mei WU
    Meng ZHANG
    Hao LU
    Fuchun JIA
    Xuerui NIU
    Chunzhou SHI
    Jiale DU
    Mao JIA
    Qian YU
    Shiming LI
    Youjun ZHU
    Xiaohua MA
    Yue HAO
    [J]. Science China(Information Sciences)., 2024, 67 (12) - 340
  • [7] Design and Simulation of Quasi-Vertical GaN Based Junction Barrier Schottky Diode
    Qin, Yalong
    Cheng, Haijuan
    Guo, Weiling
    Fang, Aoqi
    Li, Jing
    Guo, Haoran
    [J]. 2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS, 2022, : 70 - 73
  • [8] Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode
    王启亮
    王婷婷
    蒲涛飞
    成绍恒
    李小波
    李柳暗
    敖金平
    [J]. Chinese Physics B, 2022, 31 (05) : 750 - 754
  • [9] Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode
    Wang, Qiliang
    Wang, Tingting
    Pu, Taofei
    Cheng, Shaoheng
    Li, Xiaobo
    Li, Liuan
    Ao, Jinping
    [J]. CHINESE PHYSICS B, 2022, 31 (05)
  • [10] Leakage Reduction of Quasi-Vertical GaN Schottky Barrier Diode With Post Oxygen Plasma Treatment
    Liu, Jiang
    Han, Chuanyu
    Liu, Weihua
    Geng, Li
    Hao, Yue
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (12) : 6929 - 6933
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