High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

被引：44
|
作者：
Guo, Xiaolu [1 ,2 ]
Zhong, Yaozong [1 ,2 ]
He, Junlei [1 ,2 ]
Zhou, Yu [1 ,2 ]
Su, Shuai [1 ,2 ]
Chen, Xin [1 ,2 ]
Liu, Jianxun [1 ,2 ]
Gao, Hongwei [1 ,2 ]
Sun, Xiujian [1 ,2 ]
Zhou, Qi [3 ]
Sun, Qian [1 ,2 ]
Yang, Hui [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Peoples R China
[2] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Univ Elect Sci & Technol China UESTC, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 04期
关键词：
GaN-on-Si; quasi-vertical; Schottky barrier diode; doping; edge termination; high voltage;
D O I：
10.1109/LED.2021.3058380
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully fabricated by using a high-quality n(-)-GaN drift layer with a precisely-controlled n-type doping. A high current on/off ratio of 10(10), an ideality factor of 1.03, a low specific on-resistance of 1.41 m Omega.cm(2), and a relatively high breakdown voltage (BV) of 250 V have been achieved for the SBD without edge termination. Furthermore, with an Argon-implanted termination, the as fabricated GaN-on-Si SBD shows a record high BV of 405 V, yielding a critical electric field of similar to 2 MV/cm, while the forward conduction characteristics are well maintained.
引用
收藏
页码：473 / 476
页数：4
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