High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

被引：44
|
作者：
Guo, Xiaolu [1 ,2 ]
Zhong, Yaozong [1 ,2 ]
He, Junlei [1 ,2 ]
Zhou, Yu [1 ,2 ]
Su, Shuai [1 ,2 ]
Chen, Xin [1 ,2 ]
Liu, Jianxun [1 ,2 ]
Gao, Hongwei [1 ,2 ]
Sun, Xiujian [1 ,2 ]
Zhou, Qi [3 ]
Sun, Qian [1 ,2 ]
Yang, Hui [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Peoples R China
[2] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Univ Elect Sci & Technol China UESTC, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 04期
关键词：
GaN-on-Si; quasi-vertical; Schottky barrier diode; doping; edge termination; high voltage;
D O I：
10.1109/LED.2021.3058380
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully fabricated by using a high-quality n(-)-GaN drift layer with a precisely-controlled n-type doping. A high current on/off ratio of 10(10), an ideality factor of 1.03, a low specific on-resistance of 1.41 m Omega.cm(2), and a relatively high breakdown voltage (BV) of 250 V have been achieved for the SBD without edge termination. Furthermore, with an Argon-implanted termination, the as fabricated GaN-on-Si SBD shows a record high BV of 405 V, yielding a critical electric field of similar to 2 MV/cm, while the forward conduction characteristics are well maintained.
引用
收藏
页码：473 / 476
页数：4
相关论文
共 49 条
  • [21] GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion
    Liu, Xuan
    Wang, Maojun
    Wei, Jin
    Wen, Cheng P.
    Xie, Bing
    Hao, Yilong
    Yang, Xuelin
    Shen, Bo
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 1636 - 1640
  • [22] Nearly ideal quasi-vertical GaN Schottky barrier diode with 1010 high on/off ratio and ultralow turn on voltage via post anode annealing
    Chen, Jiabo
    Liu, Zhihong
    Bian, Zhaoke
    Wang, Haiyong
    Duan, Xiaoling
    Ning, Jing
    Zhang, Jincheng
    Hao, Yue
    [J]. 2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
  • [23] Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation
    Kang, Xuanwu
    Sun, Yue
    Zheng, Yingkui
    Wei, Ke
    Wu, Hao
    Zhao, Yuanyuan
    Liu, Xinyu
    Zhang, Guoqi
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (03) : 1369 - 1373
  • [24] High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer
    Li, Yue
    Yin, Ruiyuan
    Tao, Ming
    Hao, Yilong
    Wen, Cheng P.
    Wang, Maojun
    Zhang, Jie
    Yang, Xuelin
    Shen, Bo
    [J]. 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019), 2019,
  • [25] Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2
    Guo, Xiaolu
    Zhong, Yaozong
    Zhou, Yu
    Su, Shuai
    Chen, Xin
    Yan, Shumeng
    Liu, Jianxun
    Sun, Xiujian
    Sun, Qian
    Yang, Hui
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (11) : 5682 - 5686
  • [26] Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
    Ozbek, A. Merve
    Baliga, B. Jayant
    [J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1361 - 1363
  • [27] High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation
    Sun, Yue
    Kang, Xuanwu
    Deng, Shixiong
    Zheng, Yingkui
    Wei, Ke
    Xu, Linwang
    Wu, Hao
    Liu, Xinyu
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (03)
  • [28] Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode
    Ha, Min-Woo
    Lee, Jun Ho
    Han, Min-Koo
    Hahn, Cheol-Koo
    [J]. SOLID-STATE ELECTRONICS, 2012, 73 : 1 - 6
  • [29] Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
    Li, Yue
    Wang, Maojun
    Yin, Ruiyuan
    Zhang, Jie
    Tao, Ming
    Xie, Bing
    Hao, Yilong
    Yang, Xuelin
    Wen, Cheng P.
    Shen, Bo
    [J]. IEEE ELECTRON DEVICE LETTERS, 2020, 41 (03) : 329 - 332
  • [30] High-voltage AlGaN/GaN Schottky barrier diodes on Si substrate with low-temperature GaN cap layer for edge termination
    Kamada, A.
    Matsubayashi, K.
    Nakagawa, A.
    Terada, Y.
    Egawa, T.
    [J]. ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2008, : 225 - +
12345