Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance

被引：58
|
作者：
Li, Yue [1 ]
Wang, Maojun [1 ]
Yin, Ruiyuan [1 ]
Zhang, Jie [2 ]
Tao, Ming [1 ]
Xie, Bing [1 ]
Hao, Yilong [1 ]
Yang, Xuelin [2 ]
Wen, Cheng P. [1 ]
Shen, Bo [2 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 03期
基金：
中国国家自然科学基金;
关键词：
GaN on Si; dislocation bending; vertical structure; Schottky barrier diode; ALGAN/GAN HEMTS; LEAKAGE CURRENT; SI; REDUCTION; BUFFER;
D O I：
10.1109/LED.2020.2968392
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report a quasi-vertical GaN Schottkybarrier diode (SBD) fabricatedon a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is 1.6 x 10(8) cm(-2) with a GaN drift layer thickness of 4.5 mu m. The fabricated prototype GaN SBD delivers a high on/off current ratio of 10(10), a high forward current density of 1.6 kA/cm(2)@3 V, a low specific on-resistance of 1.1m Omega.cm(2), and a low ideality factor of 1.23.
引用
收藏
页码：329 / 332
页数：4
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