High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment

In this letter, we report a high performance GaN quasi-vertical Schottky barrier diode (SBD) on sapphire substrate with a planar anode selective fluorine treatment (SFT). The presented SBD with anode SFT-SBD exhibits a large forward current density over 2 kA cm(-2) and a low differential specific on-resistance of 0.49 m Omega cm(2). Compared to the conventional SBD, the leakage current of SFT-SBD is suppressed over 4 orders of magnitude, leading to the breakdown voltage (BV) dramatically improved from 78 to 145 V, but without severe degradation of the on-state performance. The simulation results indicate that the anode SFT can effectively reduce the path of leakage current at reverse bias, leading to the suppressed leakage current thus enhanced BV.