High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

被引：0
|
作者：
Zhou, Feng [1 ]
Xu, Weizong [1 ]
Ren, Fangfang [1 ]
Chen, Dunjun [1 ]
Zhang, Rong [1 ]
Zheng, Youdou [1 ]
Zhu, Tinggang [2 ]
Lu, Hai [1 ]
机构：
[1] Nanjing University, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing, China
[2] CorEnergy Semiconductor Co. Ltd., Suzhou, China
来源：
Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2021年 / 2021-May卷
关键词：
Current rating - Fast switching - Junction barrier Schottky diodes - P-type doping - Reverse recovery - Reverse-recovery characteristics - Sapphire substrates - Selective areas;
D O I：
9452308
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：331 / 334
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