High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

被引：0
|
作者：
Zhou, Feng [1 ]
Xu, Weizong [1 ]
Ren, Fangfang [1 ]
Chen, Dunjun [1 ]
Zhang, Rong [1 ]
Zheng, Youdou [1 ]
Zhu, Tinggang [2 ]
Lu, Hai [1 ]
机构：
[1] Nanjing University, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing, China
[2] CorEnergy Semiconductor Co. Ltd., Suzhou, China
来源：
Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2021年 / 2021-May卷
关键词：
Current rating - Fast switching - Junction barrier Schottky diodes - P-type doping - Reverse recovery - Reverse-recovery characteristics - Sapphire substrates - Selective areas;
D O I：
9452308
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：331 / 334
相关论文
共 50 条
  • [31] Determination of the leakage current transport mechanisms in quasi-vertical GaN-on-Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures
    Chen, Jiabo
    Liu, Zhihong
    Wang, Haiyong
    Song, Xiufeng
    Bian, Zhaoke
    Duan, Xiaoling
    Zhao, Shenglei
    Ning, Jing
    Zhang, Jincheng
    Hao, Yue
    APPLIED PHYSICS EXPRESS, 2021, 14 (10)
  • [32] A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings (vol 14, 116504, 2021)
    Chen, Jiabo
    Song, Xiufeng
    Liu, Zhihong
    Duan, Xiaoling
    Wang, Haiyong
    Bian, Zhaoke
    Zhao, Shenglei
    Zhang, Jincheng
    Hao, Yue
    APPLIED PHYSICS EXPRESS, 2022, 15 (03)
  • [33] High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
    Chang, Qingyuan
    Hou, Bin
    Yang, Ling
    Wu, Mei
    Zhang, Meng
    Lu, Hao
    Jia, Fuchun
    Niu, Xuerui
    Shi, Chunzhou
    Du, Jiale
    Jia, Mao
    Yu, Qian
    Li, Shiming
    Zhu, Youjun
    Ma, Xiaohua
    Hao, Yue
    SCIENCE CHINA-INFORMATION SCIENCES, 2024, 67 (12)
  • [34] High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
    Qingyuan CHANG
    Bin HOU
    Ling YANG
    Mei WU
    Meng ZHANG
    Hao LU
    Fuchun JIA
    Xuerui NIU
    Chunzhou SHI
    Jiale DU
    Mao JIA
    Qian YU
    Shiming LI
    Youjun ZHU
    Xiaohua MA
    Yue HAO
    Science China(Information Sciences), 2024, 67 (12) : 339 - 340
  • [35] Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage
    Bian, Zhaoke
    Zhang, Tao
    Zhang, Jincheng
    Zhao, Shenglei
    Zhou, Hong
    Xue, Junshuai
    Duan, Xiaoling
    Zhang, Yachao
    Chen, Jiabo
    Dang, Kui
    Ning, Jing
    Hao, Yue
    APPLIED PHYSICS EXPRESS, 2019, 12 (08)
  • [36] DESIGN OF QUASI-VERTICAL GaN HIGH POWER SCHOTTKY DIODES BASED ON FIELD PLATE TERMINATION
    Sundaramoorthy, Vinoth
    Nistor, Iulian
    2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2010, : 401 - 404
  • [37] Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier
    Cao, Y.
    Chu, R.
    Li, R.
    Chen, M.
    Williams, A. J.
    APPLIED PHYSICS LETTERS, 2016, 108 (11)
  • [38] Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension
    Li, Shaocheng
    Yang, Shu
    Han, Zhao
    Hao, Weibing
    Sheng, Kuang
    Xu, Guangwei
    Long, Shibing
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2024, 12 : 548 - 554
  • [39] High-Performance GaN Vertical Schottky Barrier Diode With Self-Alignment Trench Structure
    Liu, Jiang
    Han, Chuanyu
    Yang, Mingchao
    Liu, Weihua
    Geng, Li
    Hao, Yue
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (09) : 5082 - 5087
  • [40] Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate
    Chiu, Hsien-Chin
    Peng, Li-Yi
    Wang, Hsiang-Chun
    Kao, Hsuan-Ling
    Wang, Hou-Yu
    Chyi, Jen-Inn
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (10)
12345