DESIGN OF QUASI-VERTICAL GaN HIGH POWER SCHOTTKY DIODES BASED ON FIELD PLATE TERMINATION

被引：0
|
作者：
Sundaramoorthy, Vinoth [1 ]
Nistor, Iulian [1 ]
机构：
[1] ABB Switzerland Ltd, Corp Res, CH-5405 Baden, Switzerland
来源：
2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2 | 2010年
关键词：
Field plate; bevel oxide; breakdown voltage;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the numerical design of a optimized quasi-vertical gallium nitride powe Schottky diode fo high powe electronic applications is illustrated. Bevel oxide field plate was employed as a junction termination technique to enhance the breakdown voltage in reverse bias. It was found that a maximum breakdown voltage of 1995 V was obtained for a bevel width of 18 um and oxide thickness of 1.5 um. This diode with on-state resistance of 14m Omega cm(2) has a high power figure of merit of 274 MW/cm(2).
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页码：401 / 404
页数：4
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