DESIGN OF QUASI-VERTICAL GaN HIGH POWER SCHOTTKY DIODES BASED ON FIELD PLATE TERMINATION

被引：0

作者：

Sundaramoorthy, Vinoth ^{[1
]}

Nistor, Iulian ^{[1
]}

机构：

[1] ABB Switzerland Ltd, Corp Res, CH-5405 Baden, Switzerland

来源：

2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2 | 2010年

关键词：

Field plate; bevel oxide; breakdown voltage;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the numerical design of a optimized quasi-vertical gallium nitride powe Schottky diode fo high powe electronic applications is illustrated. Bevel oxide field plate was employed as a junction termination technique to enhance the breakdown voltage in reverse bias. It was found that a maximum breakdown voltage of 1995 V was obtained for a bevel width of 18 um and oxide thickness of 1.5 um. This diode with on-state resistance of 14m Omega cm(2) has a high power figure of merit of 274 MW/cm(2).

引用

页码：401 / 404

页数：4

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