High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation

被引：0
|
作者：
Chang, Qingyuan [1 ]
Hou, Bin [1 ]
Yang, Ling [1 ]
Wu, Mei [1 ]
Zhang, Meng [1 ]
Lu, Hao [1 ]
Jia, Fuchun [2 ]
Niu, Xuerui [1 ]
Shi, Chunzhou [3 ]
Du, Jiale [1 ]
Jia, Mao [1 ]
Yu, Qian [1 ]
Li, Shiming [1 ]
Zhu, Youjun [1 ]
Ma, Xiaohua [1 ]
Hao, Yue [1 ]
机构：
[1] School of Microelectronics, Xidian University, Xi’an,710071, China
[2] The 29th Research Institute of China Electronics Technology Group Corporation, Chengdu,610036, China
[3] School of Advanced Materials and Nanotechnology, Xidian University, Xi’an,710071, China
来源：
Science China Information Sciences | 2024年 / 67卷 / 12期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1007/s11432-024-4164-1
中图分类号：
学科分类号：
摘要：
5
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    Bin HOU
    Ling YANG
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    [J]. Chinese Physics B, 2022, 31 (05) : 750 - 754
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