High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio

被引：39
|
作者：
Kotlyar, MV [1 ]
O'Faolain, L [1 ]
Wilson, R [1 ]
Krauss, TF [1 ]
机构：
[1] Univ St Andrews, Sch Phys & Astron, Ultrafast Photon Collaborat, St Andrews KY16 9SS, Fife, Scotland
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 04期
关键词：
D O I：
10.1116/1.1767106
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate etching conditions for photonic crystals (PhCs) in InGaAsP/InP and AlGaAs/GaAs using a new regime of CAME operation. We show that the beam voltage-current ratio is critical in obtaining high material/mask selectivity. For one-dimensional PhCs, i.e., air slots, selectivities of 22:1 and 50:1 were achieved in InP and GaAs, respectively, using a very high beam voltage (about 1500 V) and a low beam current (about 10 mA). Etched features were observed to be very smooth, i.e., edge roughness was low. Two-dimensional PhCs were etched in InGaAsP/InP under similar conditions achieving selectivities up to 27:1 and 34:1 for hole diameters of 170 and 270 nm, respectively. (C) 2004 American Vacuum Society.
引用
收藏
页码：1788 / 1791
页数：4
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