GAAS ALGAAS PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING CHEMICALLY ASSISTED ION-BEAM ETCHING

被引：28
|
作者：
GRANDE, WJ
JOHNSON, JE
TANG, CL
机构：
[1] IIT,RES INST,CHICAGO,IL 60616
[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 24期
关键词：
D O I：
10.1063/1.103848
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photonic integrated circuits with a virtually complete set of active and passive devices are fabricated in the GaAs/AlGaAs system by single-step chemically assisted ion beam etching. Using this straightforward processing technique, photonic integrated circuits consisting of etched facet ridge waveguide lasers coupled to passive waveguides, beamsplitters, etched turning mirrors, and photodetectors are demonstrated. The results presented point to the promise of this technique for the fabrication of future high-complexity photonic integrated circuits.
引用
收藏
页码：2537 / 2539
页数：3
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