High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio

被引：39
|
作者：
Kotlyar, MV [1 ]
O'Faolain, L [1 ]
Wilson, R [1 ]
Krauss, TF [1 ]
机构：
[1] Univ St Andrews, Sch Phys & Astron, Ultrafast Photon Collaborat, St Andrews KY16 9SS, Fife, Scotland
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 04期
关键词：
D O I：
10.1116/1.1767106
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate etching conditions for photonic crystals (PhCs) in InGaAsP/InP and AlGaAs/GaAs using a new regime of CAME operation. We show that the beam voltage-current ratio is critical in obtaining high material/mask selectivity. For one-dimensional PhCs, i.e., air slots, selectivities of 22:1 and 50:1 were achieved in InP and GaAs, respectively, using a very high beam voltage (about 1500 V) and a low beam current (about 10 mA). Etched features were observed to be very smooth, i.e., edge roughness was low. Two-dimensional PhCs were etched in InGaAsP/InP under similar conditions achieving selectivities up to 27:1 and 34:1 for hole diameters of 170 and 270 nm, respectively. (C) 2004 American Vacuum Society.
引用
收藏
页码：1788 / 1791
页数：4
相关论文
共 50 条
  • [1] High-aspect-ratio micromachining of fluoropolymers using focused ion beam
    Matsui, Yoshinori
    Miyoshi, Nozomi
    Oshima, Akihiro
    Seki, Shu
    Washio, Masakazu
    Tagawa, Seiichi
    [J]. ION-BEAM-BASED NANOFABRICATION, 2007, 1020 : 61 - 66
  • [2] Focused ion beam iodine-enhanced etching of high aspect ratio holes in InP photonic crystals
    Callegari, V.
    Nellen, P. M.
    Kaufmann, J.
    Strasser, P.
    Robin, F.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06): : 2175 - 2179
  • [3] Thermally assisted ion beam etching of polytetrafluoroethylene a new technique for high aspect ratio etching of MEMS
    Berenschot, E
    Jansen, H
    Burger, GJ
    Gardeniers, H
    Elwenspoek, M
    [J]. NINTH ANNUAL INTERNATIONAL WORKSHOP ON MICRO ELECTRO MECHANICAL SYSTEMS, IEEE PROCEEDINGS: AN INVESTIGATION OF MICRO STRUCTURES, SENSORS, ACTUATORS, MACHINES AND SYSTEMS, 1996, : 277 - 284
  • [4] High-aspect-ratio nanophotonic components fabricated by Cl2 reactive ion beam etching
    Zubrzycki, WJ
    Vawter, GA
    Wendt, JR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2740 - 2744
  • [5] PROFILE CONTROL BY CHEMICALLY ASSISTED ION-BEAM AND REACTIVE ION-BEAM ETCHING
    CHINN, JD
    ADESIDA, I
    WOLF, ED
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 185 - 187
  • [6] High-aspect-ratio nanoporous membranes made by reactive ion etching and e-beam and interference lithography
    Divan, Ralu
    Makarova, Olga V.
    Skoog, Shelby
    Narayan, Roger
    Sumant, Anirudha V.
    Tang, Cha-Mei
    Moldovan, Nicolaie
    [J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2014, 20 (10-11): : 1797 - 1802
  • [7] High-aspect-ratio nanoporous membranes made by reactive ion etching and e-beam and interference lithography
    Ralu Divan
    Olga V. Makarova
    Shelby Skoog
    Roger Narayan
    Anirudha V. Sumant
    Cha-Mei Tang
    Nicolaie Moldovan
    [J]. Microsystem Technologies, 2014, 20 : 1797 - 1802
  • [8] High aspect ratio etching of GaSb/AlGaAsSb for photonic crystals
    Nilsen, Tron Arne
    Martinez, Anthony
    Bugge, Renato
    Moscho, Aaron
    Lester, Luke F.
    Fimland, Bjorn-Ove
    [J]. PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 3 - +
  • [9] Electroplating using high-aspect-ratio microstructures fabricated by proton beam writing
    Seki, Y.
    Furuta, Y.
    Nishikawa, H.
    Watanabe, T.
    Nakata, T.
    Satoh, T.
    Ishii, Y.
    Kamiya, T.
    [J]. MICROELECTRONIC ENGINEERING, 2009, 86 (4-6) : 945 - 948
  • [10] Deposition property investigation of a focused ion beam for a high-aspect-ratio metal tip
    Dae Keun Choi
    Sang Hoon Lee
    [J]. Microsystem Technologies, 2013, 19 : 363 - 370
12345