Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO3 Thin Films

被引：26
|
作者：
Wei, Xian-Kui [1 ,2 ,3 ]
Vaideeswaran, Kaushik [1 ]
Sandu, Cosmin S. [1 ]
Jia, Chun-Lin [2 ,3 ,4 ]
Setter, Nava [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland
[2] Elect Res Ctr Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[3] Elect Res Ctr Julich, Ernst Ruska Ctr Microscopy & Spect, D-52425 Julich, Germany
[4] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
来源：
ADVANCED MATERIALS INTERFACES | 2015年 / 2卷 / 18期
基金：
瑞士国家科学基金会; 欧洲研究理事会;
关键词：
DOMAIN-WALL MOTION; ELECTRON-GAS; CONDUCTION;
D O I：
10.1002/admi.201500349
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Polar translational boundaries (PTBs) are preferentially created in antiferroelectric PbZrO3 films through interfacial engineering. Probe-corrected scanning transmission electron microscopy studies reveal that RIII-1 and RI-1 type PTBs are favorably created in PbZrO3/BaZrO3/SrTiO3 and PbZrO3/SrTiO3 films, respectively. The relationship between interfacial strain and the internal strain of boundaries is the driving force for the selective formation of PTBs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页数：5
相关论文
共 50 条
  • [31] ANTIFERROELECTRIC PBZRO3 THIN-FILMS PREPARED BY MULTI-ION-BEAM SPUTTERING
    KANNO, I
    HAYASHI, S
    KITAGAWA, M
    TAKAYAMA, R
    HIRAO, T
    APPLIED PHYSICS LETTERS, 1995, 66 (02) : 145 - 147
  • [32] Giant negative electrocaloric effect in modified PbZrO3 antiferroelectric thin films doped with Mn
    Liang, Yongxi
    Li, Wenhua
    Tang, Xingui
    Shen, Zhihao
    Wang, Kaiyuan
    Hu, Jia
    Song, Wanglai
    Jiang, Yanping
    Guo, Xiaobin
    Yan, Kai
    APPLIED PHYSICS LETTERS, 2024, 125 (07)
  • [33] Antiferroelectric PbZrO3 films prepared by sol-gel processing
    Cakare, L
    Malic, B
    Kosec, M
    Sternberg, A
    FERROELECTRICS, 2000, 241 (1-4) : 107 - 114
  • [34] Remarkably Enhanced Negative Electrocaloric Effect in PbZrO3 Thin Film by Interface Engineering
    Wu, Ming
    Song, Dongsheng
    Guo, Mengyao
    Bian, Jihong
    Li, Junning
    Yang, Yaodong
    Huang, Haitao
    Pennycook, Stephen J.
    Lou, Xiaojie
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (40) : 36863 - 36870
  • [35] Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations
    Ge, Jun
    Remiens, Denis
    Costecalde, Jean
    Chen, Ying
    Dong, Xianlin
    Wang, Genshui
    APPLIED PHYSICS LETTERS, 2013, 103 (16)
  • [36] Effect of Eu Doping on the Electrical Properties and Energy Storage Performance of PbZrO3 Antiferroelectric Thin Films
    Ye, Mao
    Sun, Qiu
    Chen, Xiangqun
    Jiang, Zhaohua
    Wang, Fuping
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2011, 94 (10) : 3234 - 3236
  • [37] Atomic layer deposition of PbZrO3 thin films
    Harjuoja, Jenni
    Vayrynen, Samuli
    Putkonen, Matti
    Niinisto, Lauri
    Rauhala, Eero
    APPLIED SURFACE SCIENCE, 2007, 253 (12) : 5228 - 5232
  • [38] Enhancement of charge and energy storage in PbZrO3 thin films by local field engineering
    Sa, Tongliang
    Cao, Ziping
    Wang, Yongjin
    Zhu, Hongbo
    APPLIED PHYSICS LETTERS, 2014, 105 (04)
  • [39] Low voltage-driven high-performance thermal switching in antiferroelectric PbZrO3 thin films
    Liu, Chenhan
    Si, Yangyang
    Zhang, Hua
    Wu, Chao
    Deng, Shiqing
    Dong, Yongqi
    Li, Yijie
    Zhuo, Meng
    Fan, Ningbo
    Xu, Bin
    Lu, Ping
    Zhang, Lifa
    Lin, Xi
    Liu, Xingjun
    Yang, Juekuan
    Luo, Zhenlin
    Das, Sujit
    Bellaiche, Laurent
    Chen, Yunfei
    Chen, Zuhuang
    SCIENCE, 2023, 382 (6676) : 1265 - 1269
  • [40] Electrical fatigue of ferroelectric PbZr0.5Ti0.5O3 and antiferroelectric PbZrO3 thin films
    Jang, JH
    Yoon, KH
    Oh, KY
    MATERIALS RESEARCH BULLETIN, 2000, 35 (03) : 393 - 402
12345