Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO3 Thin Films

被引：26
|
作者：
Wei, Xian-Kui [1 ,2 ,3 ]
Vaideeswaran, Kaushik [1 ]
Sandu, Cosmin S. [1 ]
Jia, Chun-Lin [2 ,3 ,4 ]
Setter, Nava [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland
[2] Elect Res Ctr Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[3] Elect Res Ctr Julich, Ernst Ruska Ctr Microscopy & Spect, D-52425 Julich, Germany
[4] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
来源：
ADVANCED MATERIALS INTERFACES | 2015年 / 2卷 / 18期
基金：
瑞士国家科学基金会; 欧洲研究理事会;
关键词：
DOMAIN-WALL MOTION; ELECTRON-GAS; CONDUCTION;
D O I：
10.1002/admi.201500349
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Polar translational boundaries (PTBs) are preferentially created in antiferroelectric PbZrO3 films through interfacial engineering. Probe-corrected scanning transmission electron microscopy studies reveal that RIII-1 and RI-1 type PTBs are favorably created in PbZrO3/BaZrO3/SrTiO3 and PbZrO3/SrTiO3 films, respectively. The relationship between interfacial strain and the internal strain of boundaries is the driving force for the selective formation of PTBs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium
    Hao, Xihong
    Zhai, Jiwei
    Zhou, Jing
    Yue, Zhenxing
    Yang, Jichun
    Zhao, Wenguang
    An, Shengli
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (02) : 271 - 275
  • [22] Antiferroelectric PbZrO3 thin films prepared by multi-ion-beam sputtering
    Appl Phys Lett, 2 (145):
  • [23] Tailoring the negative electrocaloric effect of PbZrO3 antiferroelectric thin films by Yb doping
    Wang, Weihua
    Chen, Xiangqun
    Sun, Qiu
    Xin, Tiezhu
    Ye, Mao
    JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 830
  • [24] Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films
    Si, Yangyang
    Zhang, Tianfu
    Chen, Zuhuang
    Zhang, Qinghua
    Xu, Shuai
    Lin, Ting
    Huang, Haoliang
    Zhou, Chao
    Chen, Shanquan
    Liu, Suzhen
    Dong, Yongqi
    Liu, Chenhan
    Tang, Yunlong
    Lu, Yalin
    Jin, Kuijuan
    Guo, Er-Jia
    Lin, Xi
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (45) : 51096 - 51104
  • [25] Electrocaloric effect in PbZrO3 thin films with antiferroelectric-ferroelectric phase competition
    Glazkova-Swedberg, E.
    Cuozzo, J.
    Lisenkov, S.
    Ponomareva, I.
    COMPUTATIONAL MATERIALS SCIENCE, 2017, 129 : 44 - 48
  • [26] Critical field anisotropy in the antiferroelectric switching of PbZrO3 films
    Milesi-Brault, Cosme
    Godard, Nicolas
    Girod, Stephanie
    Fleming, Yves
    El Adib, Brahime
    Valle, Nathalie
    Glinsek, Sebastjan
    Defay, Emmanuel
    Guennou, Mael
    APPLIED PHYSICS LETTERS, 2021, 118 (04)
  • [27] Backward switching phenomenon from field forced ferroelectric to antiferroelectric phases in antiferroelectric PbZrO3 thin films
    Bharadwaja, SSN
    Krupanidhi, SB
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) : 4541 - 4547
  • [28] High energy storage of PbZrO3 antiferroelectric thin films via constructing phase composition
    Zheng, M. M.
    Liu, A. D.
    Wang, S. Q.
    Chen, J. Y.
    Yang, F.
    Liu, T. X.
    Wu, S. J.
    Lin, L.
    Hu, Y. C.
    Shang, J.
    Yin, S. Q.
    Wang, X. W.
    PHYSICA SCRIPTA, 2024, 99 (01)
  • [29] Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films
    Dobal, PS
    Katiyar, RS
    Bharadwaja, SSN
    Krupanidhi, SB
    APPLIED PHYSICS LETTERS, 2001, 78 (12) : 1730 - 1732
  • [30] Improved energy storage performance of PbZrO3 antiferroelectric thin films crystallized by microwave radiation
    Fang, Yin
    Bai, Yu
    Li, Yi Zhuo
    Liu, Ning
    Zhang, Fan
    Wang, Chao
    Wang, Zhan Jie
    RSC ADVANCES, 2021, 11 (30) : 18387 - 18394
12345