Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO3 Thin Films

被引：26
|
作者：
Wei, Xian-Kui [1 ,2 ,3 ]
Vaideeswaran, Kaushik [1 ]
Sandu, Cosmin S. [1 ]
Jia, Chun-Lin [2 ,3 ,4 ]
Setter, Nava [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland
[2] Elect Res Ctr Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[3] Elect Res Ctr Julich, Ernst Ruska Ctr Microscopy & Spect, D-52425 Julich, Germany
[4] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
来源：
ADVANCED MATERIALS INTERFACES | 2015年 / 2卷 / 18期
基金：
瑞士国家科学基金会; 欧洲研究理事会;
关键词：
DOMAIN-WALL MOTION; ELECTRON-GAS; CONDUCTION;
D O I：
10.1002/admi.201500349
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Polar translational boundaries (PTBs) are preferentially created in antiferroelectric PbZrO3 films through interfacial engineering. Probe-corrected scanning transmission electron microscopy studies reveal that RIII-1 and RI-1 type PTBs are favorably created in PbZrO3/BaZrO3/SrTiO3 and PbZrO3/SrTiO3 films, respectively. The relationship between interfacial strain and the internal strain of boundaries is the driving force for the selective formation of PTBs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页数：5
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