Photosensitivity of thin-film structures based on (CuInSe2)x(2ZnSe)1-x solid solutions

被引：1
|
作者：
Rud', VY
Rud', YV
Bekimbetov, RN
Gremenok, VF
Bodnar', IV
Rusak, LV
机构：
[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS
[4] Belarussian State Univ Informat Sci & Radio Engn, Minsk 220072, BELARUS
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 05期
关键词：
Evaporation; Solid Solution; Pulse Laser; Magnetic Material; Energy Barrier;
D O I：
10.1134/1.1188028
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Polycrystalline (CuInSe2)(x)(2ZnSe)(1 - x) films (x = 0.6-1.0) with p-type conductivity and a thickness of 0.5-0.9 mu m were obtained by pulsed laser evaporation. It is shown that a chalcopyrite-sphalerite transition occurs in the above system for x = 0.7. The obtained films were used to fabricate the photosensitive structure of the In/p-(CuInSe2)(x)(2ZnSe)(1 - x) and InSe(GaSe)/(CuInSe2)(x)(2ZnSe)(1 - x) types. Spectral dependences of photovoltaic-conversion quantum efficiency were studied, and the photosensitivity of the structures in relation to the type of energy barrier and the composition was analyzed. It is concluded that the structures under consideration can be used as broadband photovoltaic converters. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：558 / 562
页数：5
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