POLARIZATION PHOTOSENSITIVITY OF THIN-FILM P-CUINSE2-N-CDS STRUCTURES

The photoelectric properties of thin-film p-CuInSe2-n-CdS heterostructures have been studied. A polarization photosensitivity and an increase in the short-circuit photocurrent were observed when the reflection losses were reduced as a result of oblique incidence of linearly polarized radiation on a heterostructure from the CdS:In film side. The photopleochroism coefficient P increased with increasing angle of incidence theta in accordance with the law P is-proportional-to theta2, and at theta = 20-degrees it reached 64%. The polarization photosensitivity was found to depend on the photon energy in the range between the widths of the band gaps of the two materials in contact. The results indicated that the investigated structures could be used as broadband polarimetric photodetectors.