Photosensitivity of thin-film structures based on laser-deposited CuIn(TexSe1−x)2 layers

Thin films of the solid solutions CuIn(TexSe1−x)2 (0<x<1) exhibiting chalcopyrite structure were obtained by the method of laser deposition. Using half-transmitting indium layers, Schottky diodes were prepared on the basis of the films obtained. The spectral dependence of the sensitivity as a function of the ratio between Te and Se was investigated by illuminating the structures through the In contact. Analysis of the experimental results showed that the region of spectral sensitivity of such thin-film structures depends on the tellurium content in the CuIn(TexSe1−x)2 layers.