Temperature and frequency dependencies of charging and discharging properties in MOS memory based on nanocrystalline silicon dot

被引：0
|
作者：
Huang, SY [1 ]
Banerjee, S [1 ]
Oda, S [1 ]
机构：
[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002 | 2002年 / 715卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structures have been studied. A clear positive shift in capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics suggests electron trapping in nc-Si dots. The role of interface states and deep traps in these devices has also been examined, which shows that they have little effect on the overall device performance.
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页码：769 / 774
页数：6
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