Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory

被引：30

作者：

Molas, G ^{[1
]}

De Salvo, B ^{[1
]}

Mariolle, D ^{[1
]}

Ghibaudo, G ^{[1
]}

Toffoli, A ^{[1
]}

Buffet, N ^{[1
]}

Deleonibus, S ^{[1
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(03)00177-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present a silicon nanocrystal memory showing single electron charging/discharging phenomena at room temperature. A clear staircase behavior in the drain current characteristic, measured as a function of the gate voltage and of time, is observed, where each step corresponds to the capture/emission of one electron in a silicon dot over the channel. A simple model, which allows for the evaluation of the average charging/discharging time in a silicon dot and for the impact of a charged silicon dot over the channel, is finally proposed. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1645 / 1649

页数：5

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