The important contribution of photo-generated charges to the silicon nanocrystals photo-charging/discharging-response time at room temperature in MOS-photodetectors

被引：8

作者：

Chatbouri, S. ^{[1
]}

Troudi, M. ^{[1
]}

Fargi, A. ^{[1
]}

Kalboussi, A. ^{[1
]}

Souifi, A. ^{[2
]}

机构：

[1] Univ Monastir, Lab Microelect & Instrumentat LR13ES12, Fac Sci Monastir, Ave Environm, Monastir 5019, Tunisia

[2] Inst Nanotechnol Lyon Site INSA Lyon, UMR CNRS 5270, Bat Blaise Pascal,7 Ave Jean Capelle, F-69621 Villeurbanne, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 94卷

关键词：

Silicon nanocrystals; MOS-photodetector; C-V characterization; Photo-active traps; Charging/discharging of silicon nanocrystals; Quantum dot; CAPACITANCE-VOLTAGE; INTERFACE STATES;

D O I：

10.1016/j.spmi.2016.04.005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results are reported of a detailed investigation into the photogenerated changes that occur in the capacitance voltage (C-V) characteristics of Metal-Oxide-Semiconductor (MOS) photodetector, having a silicon nanocrystals (Si-ncs) embedded in SiOx=1.5 tunnel oxide layers. In order to study the influence of photon energy on charging/discharging photo-response of nanocrystal-based MOS structures, we have examined photo-capacitance-voltage (photo-CV) measurements at both light intensities 45 mu W and 75 mu W and wavelengths 436 nm and 595 nm. The photo-CV measurements indicate the important contribution of photo-generated charges to the charging/discharging mechanism. The (Si-ncs) charging/discharging photo-response time is evaluated to be 300 s at wavelength of 595 nm for 75 mu W optical power at room temperature. This response time is influenced by the photogenerated-holes lifetime in the Si-ncs. Published by Elsevier Ltd.

引用

页码：93 / 100

页数：8