Temperature and frequency dependencies of charging and discharging properties in MOS memory based on nanocrystalline silicon dot

被引：0

作者：

Huang, SY ^{[1
]}

Banerjee, S ^{[1
]}

Oda, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002 | 2002年 / 715卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structures have been studied. A clear positive shift in capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics suggests electron trapping in nc-Si dots. The role of interface states and deep traps in these devices has also been examined, which shows that they have little effect on the overall device performance.

引用

页码：769 / 774

页数：6

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