1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter

被引：15

作者：

Takemasa, K ^{[1
]}

Kubota, M ^{[1
]}

Wada, H ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Res & Dev Grp, Optoelect Labs, Tokyo 1938550, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 05期

关键词：

AlGaInAs; buried-heterostructure; mode profile converter; selective area growth; semiconductor lasers; semiconductor quantum wells;

D O I：

10.1109/68.841256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaInAs buried-heterostrucutre (BH) lasers with a mode profile converter (MPC) have been successfully fabricated for the first time. The thickness of the multiple-quantum-well (MQW) waveguide was vertically tapered by selective area growth (SAG), The threshold current I-th was 14.6 mA with a 600-mu m-long cavity and a high-reflective-coated rear facet. The full-width at half-maximum of the far-field pattern in the perpendicular and horizontal directions were 9.2 degrees and 12.6 degrees, respectively, The optical coupling loss between lasers with MPC and a single-mode fiber was 3.0 dB when the distance between the laser and fiber was 20 mu m.

引用

页码：471 / 473

页数：3

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