1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter

被引：15
|
作者：
Takemasa, K [1 ]
Kubota, M [1 ]
Wada, H [1 ]
机构：
[1] Oki Elect Ind Co Ltd, Res & Dev Grp, Optoelect Labs, Tokyo 1938550, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 05期
关键词：
AlGaInAs; buried-heterostructure; mode profile converter; selective area growth; semiconductor lasers; semiconductor quantum wells;
D O I：
10.1109/68.841256
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaInAs buried-heterostrucutre (BH) lasers with a mode profile converter (MPC) have been successfully fabricated for the first time. The thickness of the multiple-quantum-well (MQW) waveguide was vertically tapered by selective area growth (SAG), The threshold current I-th was 14.6 mA with a 600-mu m-long cavity and a high-reflective-coated rear facet. The full-width at half-maximum of the far-field pattern in the perpendicular and horizontal directions were 9.2 degrees and 12.6 degrees, respectively, The optical coupling loss between lasers with MPC and a single-mode fiber was 3.0 dB when the distance between the laser and fiber was 20 mu m.
引用
收藏
页码：471 / 473
页数：3
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